PD-97339 RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE (MO-036AB) Product Summary Part Number Radiation Level RDS(on) IRHLG77214 100K Rads (Si) 1.1Ω IRHLG73214 300K Rads (Si) 1.1Ω ID 0.8A 0.8A 2N7614M1 IRHLG77214 250V, Quad N-CHANNEL TECHNOLOGY International Rectifier’s R7TM Logic Level Power MOSFETs provide simple solution to interfacing CMOS a.
n n n n n n n n 5V CMOS and TTL Compatible Fast Switching Single Event Effect (SEE) Hardened Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 4.5V, TC= 25°C ID @ VGS = 4.5V, TC= 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current À Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Á Avalanche Current À Repetitive Avalanche Energy À Peak Diode Recovery dv/dt  Operating Jun.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2N7612M1 |
International Rectifier |
Power MOSFET | |
2 | 2N7617UC |
International Rectifier |
Power MOSFET | |
3 | 2N7604U2 |
International Rectifier |
N-CHANNEL POWER MOSFET | |
4 | 2N7609U8 |
International Rectifier |
Power MOSFET | |
5 | 2N7621T2 |
International Rectifier |
N-CHANNEL POWER MOSFET | |
6 | 2N7627UC |
International Rectifier |
Power MOSFET | |
7 | 2N7632UC |
International Rectifier |
Power MOSFET | |
8 | 2N7635-GA |
GeneSiC |
Junction Transistor | |
9 | 2N7636-GA |
GeneSiC |
Junction Transistor | |
10 | 2N7637-GA |
GeneSiC |
Junction Transistor | |
11 | 2N7638-GA |
GeneSiC |
Junction Transistor | |
12 | 2N7639-GA |
GeneSiC |
OFF Silicon Carbide Junction Transistor |