IR HiRel R7 Logic Level Power MOSFETs provide simple solution to interfacing CMOS and TTL control circuits to power devices in space and other radiation environments. The threshold voltage remains within acceptable operating limits over the full operating temperature and post radiation. This is achieved while maintaining single event gate rupture and single .
5V CMOS and TTL Compatible
Low RDS(on)
Fast Switching
Single Event Effect (SEE) Hardened
Low Total Gate Charge
Simple Drive Requirements
Hermetically Sealed
Light Weight
Surface Mount
Complementary P-Channel Available -
IRHLUC7970Z4
ESD Rating: Class 0 per MIL-STD-750,
Method 1020
Absolute Maximum Ratings (Each N-Ch Die)
Symbol
Parameter
ID1 @ VGS = 4.5V, TC = 25°C Continuous Drain Current
ID2 @ VGS = 4.5V, TC = 100°C IDM @ TC = 25°C
Continuous Drain Current Pulsed Drain Current
PD @ TC = 25°C
Maximum Power Dissipation
Linear Derating Factor
VGS EAS IAR EAR .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2N7612M1 |
International Rectifier |
Power MOSFET | |
2 | 2N7614M1 |
International Rectifier |
Power MOSFET | |
3 | 2N7604U2 |
International Rectifier |
N-CHANNEL POWER MOSFET | |
4 | 2N7609U8 |
International Rectifier |
Power MOSFET | |
5 | 2N7621T2 |
International Rectifier |
N-CHANNEL POWER MOSFET | |
6 | 2N7627UC |
International Rectifier |
Power MOSFET | |
7 | 2N7632UC |
International Rectifier |
Power MOSFET | |
8 | 2N7635-GA |
GeneSiC |
Junction Transistor | |
9 | 2N7636-GA |
GeneSiC |
Junction Transistor | |
10 | 2N7637-GA |
GeneSiC |
Junction Transistor | |
11 | 2N7638-GA |
GeneSiC |
Junction Transistor | |
12 | 2N7639-GA |
GeneSiC |
OFF Silicon Carbide Junction Transistor |