PD-97574 2N7627UC IRHLUC7970Z4 RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (LCC-6) Product Summary Part Number Radiation Level RDS(on) ID IRHLUC7970Z4 100K Rads (Si) 1.60Ω -0.65A IRHLUC7930Z4 300K Rads (Si) 1.60Ω -0.65A 60V, DUAL P-CHANNEL TECHNOLOGY International Rectifier’s R7TM Logic Level Power MOSFETs provide simple solution to interf.
n n n n n n n n n n 5V CMOS and TTL Compatible Low RDS(on) Fast Switching Single Event Effect (SEE) Hardened Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Light Weight Complimentary N-Channel Available IRHLUC770Z4 Absolute Maximum Ratings (Per Die) Parameter ID @ VGS = -4.5V, TC = 25°C ID @ VGS = -4.5V,TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current À Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Á Avalanche Curren.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2N7621T2 |
International Rectifier |
N-CHANNEL POWER MOSFET | |
2 | 2N7604U2 |
International Rectifier |
N-CHANNEL POWER MOSFET | |
3 | 2N7609U8 |
International Rectifier |
Power MOSFET | |
4 | 2N7612M1 |
International Rectifier |
Power MOSFET | |
5 | 2N7614M1 |
International Rectifier |
Power MOSFET | |
6 | 2N7617UC |
International Rectifier |
Power MOSFET | |
7 | 2N7632UC |
International Rectifier |
Power MOSFET | |
8 | 2N7635-GA |
GeneSiC |
Junction Transistor | |
9 | 2N7636-GA |
GeneSiC |
Junction Transistor | |
10 | 2N7637-GA |
GeneSiC |
Junction Transistor | |
11 | 2N7638-GA |
GeneSiC |
Junction Transistor | |
12 | 2N7639-GA |
GeneSiC |
OFF Silicon Carbide Junction Transistor |