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2N7614M1 |
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| Part Number | 2N7614M1 |
| Manufacturer | International Rectifier |
| Description | PD-97339 RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE (MO-036AB) Product Summary Part Number Radiation Level RDS(on) IRHLG77214 100K Rads (Si) 1.1Ω IRHLG73214 300K Rads (Si) 1.1Ω ID 0.8A 0.8... |
| Features |
n n n n n n n n
5V CMOS and TTL Compatible Fast Switching Single Event Effect (SEE) Hardened Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 4.5V, TC= 25°C ID @ VGS = 4.5V, TC= 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current À Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Á Avalanche Current À Repetitive Avalanche Energy À Peak Diode Recovery dv/dt  Operating Jun... |
| Document |
 2N7614M1 Data Sheet
PDF 225.35KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2N7612M1 |
International Rectifier |
Power MOSFET |
|
| 2 | 2N7617UC |
International Rectifier |
Power MOSFET |
|
| 3 | 2N7604U2 |
International Rectifier |
N-CHANNEL POWER MOSFET |
|
| 4 | 2N7609U8 |
International Rectifier |
Power MOSFET |
|
| 5 | 2N7621T2 |
International Rectifier |
N-CHANNEL POWER MOSFET |
|