2N743 - Motorola

2N743 NPN silicon annular transistor

2N743 (SILICON) NPN silicon annular transistor designed for highspeed, low-current, saturated switching operations. CASE 22 (TO-IS) Collector connected to case MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Total Device Dissipation @TA =25° C Derate above 25°.

Features

Il V2 VSS VCC RI R2 . -151 I IS -3.0 +12 3.0 3.3 k 20 -4. S
·20 +15.3
* 6.0 330 (OHMS) R3 R4 SO 220 56 - RS - 1.0k
• VSS is pulsed for 1. 5 s at less than 10% Duty Cycle to maintain TC < 30
· C. 2-94 2N743 (continued) !ELECTRICAL CHARACTERISTICS (T, = 25'C unle.. oth.rw;s. nbted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector-Emitter Sreakdown Voltage (IC = 10 mAde, ~ = 0) SVCEO 12 - Vde Collector-Cutoff Current (VCE = 20 Vde, VSE = 0) (VCE =20Vde, VSE =0, TA =l70'C) Collector Cutoff Current (VCE = 10 Vde, VES(off) = O. 35 Vde, TA = 100' C) ICES .