The documentation and process conversion measures necessary to comply with this document shall be completed by 6 February 2014. INCH-POUND MIL-PRF-19500/660E 6 December 2013 SUPERSEDING MIL-PRF-19500/660D 11 February 2013 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTOR, P-CHANNEL SILICON, TYPES 2N7424, 2N742.
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2N7425 |
ETC |
P-Channel Transistor | |
2 | 2N7426 |
ETC |
P-Channel Transistor | |
3 | 2N740 |
Motorola |
NPN silicon annular transistors | |
4 | 2N7400 |
Intersil Corporation |
N-Channel Power MOSFET | |
5 | 2N741 |
Motorola |
PNP germanium mesa transistors | |
6 | 2N741A |
Motorola |
PNP germanium mesa transistors | |
7 | 2N743 |
Motorola |
NPN silicon annular transistor | |
8 | 2N744 |
Motorola |
NPN silicon annular transistor | |
9 | 2N70 |
UTC |
N-CHANNEL POWER MOSFET | |
10 | 2N70-CA |
UTC |
N-CHANNEL MOSFET | |
11 | 2N70-CB |
UTC |
N-CHANNEL POWER MOSFET | |
12 | 2N70-HC |
UTC |
N-CHANNEL POWER MOSFET |