2N740 - Motorola

2N740 NPN silicon annular transistors

2N735 (SILICON) 2N736 2N739 2N740 NPN silicon annular transistors designed for smallsignal amplifier and general purpose switching applications. CASE 22 (TO·18) Collector connected to case MAXIMUM RATINGS Rating Collector-E':mitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Device Dissipation @ TA = 25°C Derate above 25°C O.

Features

.0 Vde, IC = 0) Symbol 2N735, 2N736 2N739, 2N740 2N735, 2N736 2N739, 2N740 BVCEO BVCBO BVEBO ICBO lEBO ON CHARACTERISTICS DC Current Gain (IC = 5.0 mAde, VCE = 5.0 Vde) Collector-Emitter Saturation Voltage (IC = 10 mAde, IB = 2.0 mAde) Base-Emitter Voltage (IC = 10 mAde, IB = 2.0 mAde) 2N735, 2N739 2N736, 2N740 hFE VCE(sat) VBE SMALL
·SIGNAL CHARACTERISTICS OUtput Capacitance (VCB = 5.0 Vde, IE = 0, f = 1.0 MHz) Input Impedance (IC = 5.0 mAde, VCE = 5.0 We, f = 1.0 kHz) Small-Signal Current Gain (IC = 5.0 mAde, VCE = 5.0 Vde, f = 1.0 Hz) Cob 2N735, 2N739 h1. e 2N736, 2N740 hfe 2N73.