The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K RADS of total dose hardness to provide devices wh.
• 8A, 200V, rDS(ON) = 0.440Ω
• Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si)
• Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias
• Dose Rate - Typically Survives 3E9 RAD (Si)/s at 80% BVDSS - Typically Survives 2E12 if Current Limited to IDM
• Photo Current - 3.0nA Per-RAD(Si)/s Typically
• Neutron - Maintain Pre-RAD Specifications for 1E13 Neutrons/cm2 - Usable to 1E14 Neutrons/cm2
Ordering Information
PART NUMBER JANSR2N7400 PACKAGE TO-257AA
Also available at othe.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2N740 |
Motorola |
NPN silicon annular transistors | |
2 | 2N741 |
Motorola |
PNP germanium mesa transistors | |
3 | 2N741A |
Motorola |
PNP germanium mesa transistors | |
4 | 2N7424 |
ETC |
P-Channel Transistor | |
5 | 2N7425 |
ETC |
P-Channel Transistor | |
6 | 2N7426 |
ETC |
P-Channel Transistor | |
7 | 2N743 |
Motorola |
NPN silicon annular transistor | |
8 | 2N744 |
Motorola |
NPN silicon annular transistor | |
9 | 2N70 |
UTC |
N-CHANNEL POWER MOSFET | |
10 | 2N70-CA |
UTC |
N-CHANNEL MOSFET | |
11 | 2N70-CB |
UTC |
N-CHANNEL POWER MOSFET | |
12 | 2N70-HC |
UTC |
N-CHANNEL POWER MOSFET |