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2N7336 IRFG6110 MECHANICAL DATA Dimensions in mm (inches) 14 LEAD DUAL IN LINE QUAD N & P CHANNEL POWER MOSFETS BVDSS 8 19.507 ± 0.432 (0.768 ± 0.017) 2.134 (0.084) 0.457 ± 0.102 (0.018 ± 0.004) ±100V N-CHANNEL P-CHANNEL 9.525 ± 0.635 (0.375 ± 0.025) 6.426 ± 0.305 (0.253 ± 0.012) 14 ID(cont) RDS(on) FEATURES 1A 0.7Ω -0.75A 1.4Ω 1 7 • AVALANCHE E.
1A 0.7Ω
-0.75A 1.4Ω
1
7
• AVALANCHE ENERGY RATED
1.422 ± 0.102 (0.056 ± 0.004) 2.54 (0.100)
• HERMETICALLY SEALED
• DYNAMIC dv/dt RATING
• SIMPLE DRIVE REQUIREMENTS
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• FOR AUTOMATIC INSERTION
5—Gate 2 6—Source 2 7—Drain 2 8—Drain 3 9—Source3 10—Gate 3 12—Gate 4 13—Source 4 14—Drain 4
N-CHANNEL P-CHANNEL N-CHANNEL P-CHANNEL 1—Drain 1 2—Source 1 3—Gate 1
• SIMPLE DRIVE REQUIREMENTS
• EASE OF PARALLELING
• 2 N-CHANNEL/2 P-CHANNEL CO-PACKAGED HEXFETS P-CHANNEL
±20V -0.75A -0.5A -3A 1.4W 0.011W/°C 75mJ -5.5V/ns
–55 to 150°C
ABSOLUTE MAXIMUM RATINGS(Tcase = 25°C unless .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2N731 |
Motorola |
NPN silicon transistor |
|
| 2 | 2N735 |
Motorola |
NPN silicon annular transistors |
|
| 3 | 2N736 |
Motorola |
NPN silicon annular transistors |
|
| 4 | 2N7368 |
Microsemi Corporation |
NPN HIGH POWER SILICON TRANSISTOR |
|
| 5 | 2N7369 |
Microsemi Corporation |
PNP HIGH POWER SILICON TRANSISTOR |
|
| 6 | 2N7370 |
Microsemi |
NPN DARLINGTON HIGH POWER SILICON TRANSISTOR |
|
| 7 | 2N7371 |
Microsemi Corporation |
PNP DARLINGTON HIGH POWER SILICON TRANSISTOR |
|
| 8 | 2N7372 |
Microsemi Corporation |
Complimentary Power Transistors |
|
| 9 | 2N7373 |
Microsemi Corporation |
Complimentary Power Transistors |
|
| 10 | 2N7375 |
SSDI |
NPN POWER TRANSISTOR |
|
| 11 | 2N7377 |
SSDI |
NPN Transistor |
|
| 12 | 2N739 |
Motorola |
NPN silicon annular transistors |
|