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2N735 (SILICON) 2N736 2N739 2N740 NPN silicon annular transistors designed for smallsignal amplifier and general purpose switching applications. CASE 22 (TO·18) Collector connected to case MAXIMUM RATINGS Rating Collector-E':mitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Device Dissipation @ TA = 25°C Derate above 25°C O.
.0 Vde, IC = 0)
Symbol
2N735, 2N736 2N739, 2N740
2N735, 2N736 2N739, 2N740
BVCEO BVCBO BVEBO ICBO
lEBO
ON CHARACTERISTICS
DC Current Gain (IC = 5.0 mAde, VCE = 5.0 Vde)
Collector-Emitter Saturation Voltage (IC = 10 mAde, IB = 2.0 mAde)
Base-Emitter Voltage (IC = 10 mAde, IB = 2.0 mAde)
2N735, 2N739 2N736, 2N740
hFE VCE(sat)
VBE
SMALL
·SIGNAL CHARACTERISTICS
OUtput Capacitance (VCB = 5.0 Vde, IE = 0, f = 1.0 MHz)
Input Impedance (IC = 5.0 mAde, VCE = 5.0 We, f = 1.0 kHz)
Small-Signal Current Gain (IC = 5.0 mAde, VCE = 5.0 Vde, f = 1.0 Hz)
Cob
2N735, 2N739
h1. e
2N736, 2N740
hfe 2N73.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2N731 |
Motorola |
NPN silicon transistor |
|
| 2 | 2N7336 |
Sames |
14 LEAD DUAL IN LINE QUAD N & P CHANNEL POWER MOSFETS |
|
| 3 | 2N735 |
Motorola |
NPN silicon annular transistors |
|
| 4 | 2N7368 |
Microsemi Corporation |
NPN HIGH POWER SILICON TRANSISTOR |
|
| 5 | 2N7369 |
Microsemi Corporation |
PNP HIGH POWER SILICON TRANSISTOR |
|
| 6 | 2N7370 |
Microsemi |
NPN DARLINGTON HIGH POWER SILICON TRANSISTOR |
|
| 7 | 2N7371 |
Microsemi Corporation |
PNP DARLINGTON HIGH POWER SILICON TRANSISTOR |
|
| 8 | 2N7372 |
Microsemi Corporation |
Complimentary Power Transistors |
|
| 9 | 2N7373 |
Microsemi Corporation |
Complimentary Power Transistors |
|
| 10 | 2N7375 |
SSDI |
NPN POWER TRANSISTOR |
|
| 11 | 2N7377 |
SSDI |
NPN Transistor |
|
| 12 | 2N739 |
Motorola |
NPN silicon annular transistors |
|