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2N7336 |
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| Part Number | 2N7336 |
| Manufacturer | Sames |
| Description | 2N7336 IRFG6110 MECHANICAL DATA Dimensions in mm (inches) 14 LEAD DUAL IN LINE QUAD N & P CHANNEL POWER MOSFETS BVDSS 8 19.507 ± 0.432 (0.768 ± 0.017) 2.134 (0.084) 0.457 ± 0.102 (0.018 ± 0.004) ±... |
| Features |
1A 0.7Ω
-0.75A 1.4Ω
1
7
• AVALANCHE ENERGY RATED 1.422 ± 0.102 (0.056 ± 0.004) 2.54 (0.100) • HERMETICALLY SEALED • DYNAMIC dv/dt RATING • SIMPLE DRIVE REQUIREMENTS www.DataSheet4U.com • FOR AUTOMATIC INSERTION 5—Gate 2 6—Source 2 7—Drain 2 8—Drain 3 9—Source3 10—Gate 3 12—Gate 4 13—Source 4 14—Drain 4 N-CHANNEL P-CHANNEL N-CHANNEL P-CHANNEL 1—Drain 1 2—Source 1 3—Gate 1 • SIMPLE DRIVE REQUIREMENTS • EASE OF PARALLELING • 2 N-CHANNEL/2 P-CHANNEL CO-PACKAGED HEXFETS P-CHANNEL ±20V -0.75A -0.5A -3A 1.4W 0.011W/°C 75mJ -5.5V/ns –55 to 150°C ABSOLUTE MAXIMUM RATINGS(Tcase = 25°C unless ... |
| Document |
 2N7336 Data Sheet
PDF 70.95KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2N731 |
Motorola |
NPN silicon transistor |
|
| 2 | 2N735 |
Motorola |
NPN silicon annular transistors |
|
| 3 | 2N736 |
Motorola |
NPN silicon annular transistors |
|
| 4 | 2N7368 |
Microsemi Corporation |
NPN HIGH POWER SILICON TRANSISTOR |
|
| 5 | 2N7369 |
Microsemi Corporation |
PNP HIGH POWER SILICON TRANSISTOR |
|