These power transistors are produced by PPC's MULTIPLE DIFFUSED PLANAR process. This technology produces high voltage devices with excellent switching speeds, frequency response, gain linearity, saturation voltages, high current gain, and safe operating areas. These devices have excellent unclamped and clamped reverse energy ratings with the base to emitter.
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Planar Process for Reliability Fast Switching High-Frequency Power Transistors For Complementary Use with Each Other 15 mj Reverse Energy Rating with IC = 10MA and 4 V Reverse Bias Similar to 2N5004 and 2N5005 but JEDEC TO-254AA Package Leads can be Formed All Terminals Isolated from the Case
Complimentary Power Transistors in Hermetic Isolated TO-254AA Packages JAN/TX/TXV/JANS
DESCRIPTION:
These power transistors are produced by PPC's MULTIPLE DIFFUSED PLANAR process. This technology produces high voltage devices with excellent switching speeds, frequency response, gain li.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2N7370 |
Microsemi |
NPN DARLINGTON HIGH POWER SILICON TRANSISTOR | |
2 | 2N7371 |
Microsemi Corporation |
PNP DARLINGTON HIGH POWER SILICON TRANSISTOR | |
3 | 2N7372 |
Microsemi Corporation |
Complimentary Power Transistors | |
4 | 2N7375 |
SSDI |
NPN POWER TRANSISTOR | |
5 | 2N7377 |
SSDI |
NPN Transistor | |
6 | 2N731 |
Motorola |
NPN silicon transistor | |
7 | 2N7336 |
Sames |
14 LEAD DUAL IN LINE QUAD N & P CHANNEL POWER MOSFETS | |
8 | 2N735 |
Motorola |
NPN silicon annular transistors | |
9 | 2N736 |
Motorola |
NPN silicon annular transistors | |
10 | 2N7368 |
Microsemi Corporation |
NPN HIGH POWER SILICON TRANSISTOR | |
11 | 2N7369 |
Microsemi Corporation |
PNP HIGH POWER SILICON TRANSISTOR | |
12 | 2N739 |
Motorola |
NPN silicon annular transistors |