2N7085 MECHANICAL DATA Dimensions in mm(inches) 4.83 (0.190) 5.08 (0.200) 0.89 (0.035) 1.14 (0.045) 10.41 (0.410) 10.67 (0.420) N–CHANNEL ENHANCEMENT MODE TRANSISTOR 16.38 (0.645) 16.89 (0.665) 13.38 (0.527) 13.64 (0.537) 3.56 (0.140) Dia. 3.81 (0.150) 10.41 (0.410) 10.92 (0.430) 1 2 3 12.07 (0.500) 19.05 (0.750) V(BR)DSS ID(A) RDS(on) 0.64 (0.025) D.
• TO257AB HERMETIC PACKAGE FOR HIGH RELIABILITY APPLICATIONS
• SCREENING OPTIONS AVAILBLE
TO
–257AB Metal Package
Pin 1
– Gate Pin 2
– Drain Pin 3
– Source
• SIMPLE DRIVE REQUIREMENTS
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
VDS VGS ID IDM PD TJ , Tstg TL Drain
– Source Voltage Gate
– Source Voltage Continuous Drain Current (TJ = 150°C) Pulsed Drain Current Power Dissipation TC = 25°C TC = 100°C Operating Junction and Storage Temperature Range Lead Temperature (1/16” from case for 10 sec.) TC = 25°C TC = 100°C 100V ±20V 20A 12A 80A 60W 20W
–55 to 150°C 300°C
Semelab p.
TEMIC Siliconix N-Channel Enhancement-Mode lransistor 2N7085 Product Summary V(BR)DSS (V) 100 rDS(on) (Q) 0.D75 ID .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2N708 |
Telefunken |
Silicon NPN Transistor | |
2 | 2N708 |
Microsemi Corporation |
NPN SILICON SWITCHING TRANSISTOR | |
3 | 2N708 |
CDIL |
NPN SILICON PLANAR SWITCHING TRANSISTOR | |
4 | 2N708 |
STMicroelectronics |
Silicon Planar NPN Transistor | |
5 | 2N708 |
Motorola |
SWITCHING TRANSISTOR | |
6 | 2N7080 |
TEMIC |
P-Channel Transistor | |
7 | 2N7081 |
TEMIC |
N-Channel Transistor | |
8 | 2N7081 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
9 | 2N7081-220M-ISO |
Seme LAB |
N-CHANNEL POWER MOSFET | |
10 | 2N7081220MISO |
Seme LAB |
N-CHANNEL POWER MOSFET | |
11 | 2N7086 |
Seme LAB |
N-CHANNEL ENHANCEMENT MODE TRANSISTOR | |
12 | 2N7086 |
TEMIC |
N-Channel Transistor |