2N7081–220M–ISO MECHANICAL DATA Dimensions in mm(inches) 4.83 (0.190) 5.08 (0.200) 0.89 (0.035) 1.14 (0.045) N–CHANNEL POWER MOSFET VDSS ID(cont) RDS(on) 100V 11A 0.15Ω 10.41 (0.410) 10.67 (0.420) 16.38 (0.645) 16.89 (0.665) 13.38 (0.527) 13.64 (0.537) 3.56 (0.140) Dia. 3.81 (0.150) 10.41 (0.410) 10.92 (0.430) 1 2 3 12.07 (0.500) 19.05 (0.750) FEATUR.
• TO
–220 ISOLATED HERMETIC PACKAGE
• LOW RDS(ON)
0.64 (0.025) Dia. 0.89 (0.035) 2.54 (0.100) BSC 3.05 (0.120) BSC
• SIMPLE DRIVE REQUIREMENTS
TO
–220 Metal Package
Pin 1
– Gate Pin 2
– Drain Pin 3
– Source
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
VDS VGS ID IDM PD TJ , Tstg TL Drain
– Source Voltage Gate
– Source Voltage Continuous Drain Current Pulsed Drain Current 1 Power Dissipation TC = 25°C TC = 100°C Operating and Storage Temperature Range Lead Temperature (1/16” from case for 10 sec.) TC = 25°C TC = 100°C 100V ±20V 11A 7.7A 48A 45W 18W
–55 to 150°C 300°C
Semela.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2N7081 |
TEMIC |
N-Channel Transistor | |
2 | 2N7081 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
3 | 2N7081220MISO |
Seme LAB |
N-CHANNEL POWER MOSFET | |
4 | 2N708 |
Telefunken |
Silicon NPN Transistor | |
5 | 2N708 |
Microsemi Corporation |
NPN SILICON SWITCHING TRANSISTOR | |
6 | 2N708 |
CDIL |
NPN SILICON PLANAR SWITCHING TRANSISTOR | |
7 | 2N708 |
STMicroelectronics |
Silicon Planar NPN Transistor | |
8 | 2N708 |
Motorola |
SWITCHING TRANSISTOR | |
9 | 2N7080 |
TEMIC |
P-Channel Transistor | |
10 | 2N7085 |
Seme LAB |
N-CHANNEL ENHANCEMENT MODE TRANSISTOR | |
11 | 2N7085 |
TEMIC |
N-Channel Transistor | |
12 | 2N7086 |
Seme LAB |
N-CHANNEL ENHANCEMENT MODE TRANSISTOR |