TEMIC Siliconix N-Channel Enhancement-Mode Transistor 2N7081 Product Summary V(BR)nSS (V) 100 rnS(on) (Q) 0.15 In (A) 13 TO-2S7AB Hermetic Package o Case Isolated GD S ThpView D Go-l S N-Channel MOSFET Absolute Maximum Ratings (Tc = 25°C Unless Otherwise Noted) Drain-Source Voltage Gate-Source Voltage Parameter Continuous Drain Current (TJ = 150"C.
Voltage V(BR)DSS VGS = Ov, In = 250 f'A 100 Gate Threshold Voltage VGS(th) Vns = VGS, In = 250 "A 2.0 Gate-Body Leakage IGSS Vns = OV,VGS = ±20V Zero Gate Voltage Drain Current On-State Drain Currentb Drain-Source On-State Resistanceb Inss In(on) rnS(on) Vns = 80 V, VGS = OV Vns = BOV, VGS = Ov, TJ = 125'C Vns -lOV,VGS -lOY 13.0 VGS - 10 V, In = 8.0 A VGS = 10 V, In = 8.0 A, TJ = 125'C Forward 'Iransconductanceb gr. Vns = 15 V, In = 8.0 A 4.0 Dynamic Input Capacitance Output Capacitance Reverse 'Iransfer Capacitance Thtal Gate Charge" Gate-Source Chargee Gate-Drain Char.
·TO–220 ISOLATED HERMETIC PACKAGE ·LOW RDS(ON) ·SIMPLE DRIVE REQUIREMENTS APPLICATIONS ·Automotive power actuator drive.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2N708 |
Telefunken |
Silicon NPN Transistor | |
2 | 2N708 |
Microsemi Corporation |
NPN SILICON SWITCHING TRANSISTOR | |
3 | 2N708 |
CDIL |
NPN SILICON PLANAR SWITCHING TRANSISTOR | |
4 | 2N708 |
STMicroelectronics |
Silicon Planar NPN Transistor | |
5 | 2N708 |
Motorola |
SWITCHING TRANSISTOR | |
6 | 2N7080 |
TEMIC |
P-Channel Transistor | |
7 | 2N7081-220M-ISO |
Seme LAB |
N-CHANNEL POWER MOSFET | |
8 | 2N7081220MISO |
Seme LAB |
N-CHANNEL POWER MOSFET | |
9 | 2N7085 |
Seme LAB |
N-CHANNEL ENHANCEMENT MODE TRANSISTOR | |
10 | 2N7085 |
TEMIC |
N-Channel Transistor | |
11 | 2N7086 |
Seme LAB |
N-CHANNEL ENHANCEMENT MODE TRANSISTOR | |
12 | 2N7086 |
TEMIC |
N-Channel Transistor |