2N7080 - TEMIC

2N7080 P-Channel Transistor

TEMIC Siliconix P-Channel Enhancement-Mode Transistor Product Summary V(BR)OSS (V) -200 rOS(on) (Q) 0.500 10 (A) -9.5 TO-254AA S Hermetic Package o 2N7080 Case Isolated DSG Top View D P-Channel MOSFET Absolute Maximum Ratings (Tc 25°C Unless Otherwise Noted) Drain-Source Voltage Gate-Source Voltage Parameter Continuous Drain Current (TJ = 150'.

Features

dition Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currentb Drain-Source On-State Resistanceb Forward 1tansconductanceb Dynatnic V(1IR)DSS VaS(tb) lass loss 10(on) roS(on) gl, Vas = 0 V, 10 = -250 JlA Vos - Vas. 10 = -250 JlA Vos = OV,Vas = ±20V Vos = -160 V, Vas = OV Vos = -160 V, Vas = Ov, TJ = 125°C Vos = -10 V, Vas = -lOV Vas = -10 V, 10 = -6.1 A Vas = -10 V, 10 = -6.1 A, TJ = 125°C Vos = -15 V, 10 = -6.1 A Input Capacitance Output Capacitance Reverse 1tansfer Capacitance Thtal Gate Chargee Gate-Source Ch.