2N7002PW - NXP Semiconductors

2N7002PW MOSFET

N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits „ AEC-Q101 qualified „ Logic-level compatible „ Trench MOSFET technology „ Very fast switching 1.3 Applications „ High-speed line driver „ Low-side loadswitch „ Relay .

Features

„ AEC-Q101 qualified „ Logic-level compatible „ Trench MOSFET technology „ Very fast switching 1.3 Applications „ High-speed line driver „ Low-side loadswitch „ Relay driver „ Switching circuits 1.4 Quick reference data Table 1. Symbol VDS VGS ID RDSon Quick reference data Parameter drain-source voltage gate-source voltage drain current drain-source on-state resistance VGS = 10 V; Tamb = 25 °C VGS = 10 V; ID = 500 mA; Tj = 25 °C; tp ≤ 300 µs; pulsed; δ ≤ 0.01 [1] Conditions Tamb = 25 °C Min -20 - Typ 1 Max Unit 60 20 310 1.6 V V mA Ω Static characteristics [1] Device mounted on an FR4.