2N7002PT - NXP Semiconductors

2N7002PT MOSFET

N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT416 (SC-75) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits     Logic-level compatible Very fast switching Trench MOSFET technology AEC-Q101 qualified 1.3 Applications     Relay driver High-speed line driver Low-side loadswi.

Features

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 Logic-level compatible Very fast switching Trench MOSFET technology AEC-Q101 qualified 1.3 Applications
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 Relay driver High-speed line driver Low-side loadswitch Switching circuits 1.4 Quick reference data Table 1. Symbol VDS VGS ID RDSon Quick reference data Parameter drain-source voltage gate-source voltage drain current drain-source on-state resistance Conditions Tamb = 25 C Tamb = 25 C Tamb = 25 C; VGS = 10 V Tj = 25 C; VGS = 10 V; ID = 500 mA [1] Min - Typ 1 Max 60 20 310 1.6 Unit V V mA  [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided co.