2N7002PV - NXP Semiconductors

2N7002PV MOSFET

Dual N-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits „ „ „ „ Logic-level compatible Very fast switching Trench MOSFET technology AEC-Q101 qualified 1.3 Applications „ „ „ „ Relay driver High-speed line drive.

Features

„ „ „ „ Logic-level compatible Very fast switching Trench MOSFET technology AEC-Q101 qualified 1.3 Applications „ „ „ „ Relay driver High-speed line driver Low-side loadswitch Switching circuits 1.4 Quick reference data Table 1. Symbol VDS VGS ID RDSon Quick reference data Parameter drain-source voltage gate-source voltage drain current drain-source on-state resistance Conditions Tamb = 25 °C Tamb = 25 °C Tamb = 25 °C; VGS = 10 V Tj = 25 °C; VGS = 10 V; ID = 500 mA [1] Min - Typ 1 Max 60 ±20 350 1.6 Unit V V mA Ω Per transistor [1] Device mounted on an FR4 Printed-Circuit Board (PCB),.