Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible Very fast switching Trench MOSFET technology AEC-Q101 qualified 1.3 Applications Relay driver High-speed line driver Low-si.
Logic-level compatible Very fast switching Trench MOSFET technology AEC-Q101 qualified 1.3 Applications Relay driver High-speed line driver Low-side loadswitch Switching circuits 1.4 Quick reference data Table 1. Symbol VDS VGS ID RDSon Quick reference data Parameter drain-source voltage gate-source voltage drain current drain-source on-state resistance Conditions Tamb = 25 °C Tamb = 25 °C Tamb = 25 °C; VGS = 10 V Tj = 25 °C; VGS = 10 V; ID = 500 mA [1] Min - Typ 1 Max 60 ±20 320 1.6 Unit V V mA Ω Per transistor [1] Device mounted on an FR4 Printed-Circuit Board (PCB),.
Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2N7002P |
NXP |
360mA N-channel Trench MOSFET | |
2 | 2N7002P |
nexperia |
N-channel MOSFET | |
3 | 2N7002PT |
NXP Semiconductors |
MOSFET | |
4 | 2N7002PV |
NXP Semiconductors |
MOSFET | |
5 | 2N7002PV |
nexperia |
Dual N-channel MOSFET | |
6 | 2N7002PW |
NXP Semiconductors |
MOSFET | |
7 | 2N7002PW |
nexperia |
310mA N-channel MOSFET | |
8 | 2N7002 |
Fairchild Semiconductor |
N-channel FET | |
9 | 2N7002 |
GME |
N-Channel Power Mosfet | |
10 | 2N7002 |
nexperia |
300mA N-channel MOSFET | |
11 | 2N7002 |
MCC |
N-Channel MOSFET | |
12 | 2N7002 |
Microchip |
N-channel MOSFET |