2N6689 - Microsemi Corporation

2N6689 NPN POWER SILICON TRANSISTOR

TECHNICAL DATA NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/537 Devices 2N6674 2N6675 2N6689 2N6690 Qualified Level JAN JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Symbol VCEO VCBO VCEX VEBO IB IC 2N6674 2N6675 2N6689 2N6690 300 4.

Features

ristics Symbol Min. Max. Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 200 mAdc Collector-Emitter Cutoff Current VCE = 450 Vdc, VBE = -1.5 Vdc VCE = 650 Vdc, VBE = -1.5 Vdc 2N6674, 2N6689 2N6675, 2N6690 2N6674, 2N6689 2N6675, 2N6690 V(BR)CEO 300 400 0.1 0.1 Vdc ICEX mAdc 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 120101 Page 1 of 2 2N6674, 2N6675, 2N6689, 2N6690 JAN SERIES ELECTRICAL CHARACTERISTICS (con’t) Characteristics Emitter-Base Cutoff Current VEB = 7.0 Vdc Collector-Base Cutoff Current VCB = 450 Vdc VCB = 650 Vdc S.