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·With TO-3 package ·Fast switching speed ·Low collector saturation voltage APPLICATIONS ·For power supplies and other high-voltage switching applications PINNING PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER Collector-base voltage Co.
se specified PARAMETER CONDITIONS MIN TYP. 2N6688 SYMBOL MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A ;IB=0 200 V VCEsat Collector-emitter saturation voltage IC=20A; IB=2A 1.5 V VBEsat Base-emitter saturation voltage IC=20A; IB=2A 1.8 V ICEV Collector cut-off current VCE=300V; VBE=-1.5V 50 µA IEBO Emitter cut-off current VEB=8V; IC=0 100 µA hFE-1 DC current gain IC=1A ; VCE=2V 25 hFE-2 DC current gain IC=10A ; VCE=2V 20 80 hFE-3 DC current gain IC=20A ; VCE=2V 15 fT Transition frequency IC=1A ; VCE=10V 20 100 MHz 2 SavantIC S.
2N6688 - Seme LAB
2N6688 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 6.35 (0.25) 9.15 (0.36) 1.52 (0..
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2N6686 |
Seme LAB |
Bipolar NPN Device |
|
| 2 | 2N6686 |
SavantIC |
Silicon Power Transistor |
|
| 3 | 2N6686 |
Solid State |
25A SwitchMax Power Transistor |
|
| 4 | 2N6687 |
Seme LAB |
Bipolar NPN Device |
|
| 5 | 2N6687 |
SavantIC |
Silicon Power Transistor |
|
| 6 | 2N6687 |
Solid State |
25A SwitchMax Power Transistor |
|
| 7 | 2N6689 |
Microsemi Corporation |
NPN POWER SILICON TRANSISTOR |
|
| 8 | 2N6603 |
Motorola |
HIGH FREQUENCY TRANSISTOR |
|
| 9 | 2N6604 |
Motorola |
HIGH FREQUENCY TRANSISTOR |
|
| 10 | 2N6609 |
ON Semiconductor |
COMPLEMENTARY POWER TRANSISTORS |
|
| 11 | 2N6609 |
Central Semiconductor |
COMPLEMENTARY SILICON POWER TRANSITORS |
|
| 12 | 2N6609 |
NTE |
Silicon PNP Transistor |
|
