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·High DC current gain : hFE= 500(Min)@ IC= 3A ·With TO-3 package ·Low collector saturation ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general-purpose power amplifier and low frequency swithing applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE .
TER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC=10A; IB= 0.1A VBE(sat) Base-Emitter Saturation Voltage IC=10A; IB= 0.1A VBE(on) Base-Emitter On Voltage IC= 3A ; VCE= 4V IEBO Emitter Cutoff Current VEB= 5V; IC= 0 ICEO Collector Cutoff Current VCE= 80V; IB=0 ICBO Collector Base Cutoff Current VCB=100V; IE= 0 hFE-1 DC Current Gain IC= 3A; VCE= 4V hFE-2 DC Current Gain IC= 15A; VCE= 4V 2N6494 MIN TYP MAX UNIT 80 V 3.0 V 4.0 V 2.8 V 3 mA 1 mA 0.5 mA 500 100 NOTICE： ISC reserves t.
2N6494 - SavantIC
·With TO-3 package ·Low collector saturation voltage ·High DC current gain ·DARLINGTON APPLICATIONS ·General-purpose pow.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2N6490 |
STMicroelectronics |
COMPLEMENTARY SILICON POWER TRANSISTORS |
|
| 2 | 2N6490 |
ON Semiconductor |
COMPLEMENTARY SILICON POWER TRANSISTORS |
|
| 3 | 2N6490 |
Inchange Semiconductor |
Silicon PNP Power Transistors |
|
| 4 | 2N6490 |
CDIL |
PNP PLASTIC POWER TRANSISTORS |
|
| 5 | 2N6490 |
Central Semiconductor |
COMPLEMENTARY SILICON POWER TRANSISTORS |
|
| 6 | 2N6491 |
ON Semiconductor |
COMPLEMENTARY SILICON POWER TRANSISTORS |
|
| 7 | 2N6491 |
Inchange Semiconductor |
Silicon PNP Power Transistors |
|
| 8 | 2N6491 |
CDIL |
PNP PLASTIC POWER TRANSISTORS |
|
| 9 | 2N6491 |
Central Semiconductor |
COMPLEMENTARY SILICON POWER TRANSISTORS |
|
| 10 | 2N6492 |
INCHANGE |
NPN Transistor |
|
| 11 | 2N6492 |
SavantIC |
Silicon Power Transistor |
|
| 12 | 2N6493 |
INCHANGE |
NPN Transistor |
|