2N6494 INCHANGE NPN Transistor Datasheet, en stock, prix

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2N6494

INCHANGE
2N6494
2N6494 2N6494
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Part Number 2N6494
Manufacturer INCHANGE
Description ·High DC current gain : hFE= 500(Min)@ IC= 3A ·With TO-3 package ·Low collector saturation ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation A...
Features TER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC=10A; IB= 0.1A VBE(sat) Base-Emitter Saturation Voltage IC=10A; IB= 0.1A VBE(on) Base-Emitter On Voltage IC= 3A ; VCE= 4V IEBO Emitter Cutoff Current VEB= 5V; IC= 0 ICEO Collector Cutoff Current VCE= 80V; IB=0 ICBO Collector Base Cutoff Current VCB=100V; IE= 0 hFE-1 DC Current Gain IC= 3A; VCE= 4V hFE-2 DC Current Gain IC= 15A; VCE= 4V 2N6494 MIN TYP MAX UNIT 80 V 3.0 V 4.0 V 2.8 V 3 mA 1 mA 0.5 mA 500 100 NOTICE: ISC reserves t...

Document Datasheet 2N6494 Data Sheet
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