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·With TO-3 package ·Low collector saturation voltage ·High DC current gain ·DARLINGTON APPLICATIONS ·General-purpose power amplifier and low frequency swithing applications PINNING PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL VCBO VCEO VEBO IC PD Tj Tstg PARAMETER Collector-bas.
ONS MIN TYP. MAX UNIT SYMBOL VCEO(SUS) Collector-emitter sustaining voltage IC=0.1 A ;IB=0 70 V VCEsat Collector-emitter saturation voltage IC=10A ;IB=100mA 3 V VBEsat Base-emitter saturation voltage IC=10A ;IB=100mA 4 V VBE Base-emitter on voltage IC=4A ; VCE=4V 2.8 V ICEO Collector cut-off current VCE=50V; IB=0 1.0 mA ICEX Collector cut-off current VCE=100V; VBE(off)=-1.5V 0.5 mA IEBO Emitter cut-off current VEB=5V; IC=0 3.0 mA hFE-1 DC current gain IC=4A ; VCE=4V 500 hFE-2 DC current gain IC=15A ; VCE=4V 100 2 SavantIC Semiconductor www.DataShee.
2N6493 - INCHANGE
·High DC current gain : hFE= 500(Min)@ IC= 3A ·With TO-3 package ·Low collector saturation ·100% avalanche tested ·Minim.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2N6490 |
STMicroelectronics |
COMPLEMENTARY SILICON POWER TRANSISTORS |
|
| 2 | 2N6490 |
ON Semiconductor |
COMPLEMENTARY SILICON POWER TRANSISTORS |
|
| 3 | 2N6490 |
Inchange Semiconductor |
Silicon PNP Power Transistors |
|
| 4 | 2N6490 |
CDIL |
PNP PLASTIC POWER TRANSISTORS |
|
| 5 | 2N6490 |
Central Semiconductor |
COMPLEMENTARY SILICON POWER TRANSISTORS |
|
| 6 | 2N6491 |
ON Semiconductor |
COMPLEMENTARY SILICON POWER TRANSISTORS |
|
| 7 | 2N6491 |
Inchange Semiconductor |
Silicon PNP Power Transistors |
|
| 8 | 2N6491 |
CDIL |
PNP PLASTIC POWER TRANSISTORS |
|
| 9 | 2N6491 |
Central Semiconductor |
COMPLEMENTARY SILICON POWER TRANSISTORS |
|
| 10 | 2N6492 |
INCHANGE |
NPN Transistor |
|
| 11 | 2N6492 |
SavantIC |
Silicon Power Transistor |
|
| 12 | 2N6494 |
INCHANGE |
NPN Transistor |
|