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·With TO-3 package ·Low collector saturation voltage ·High DC current gain ·DARLINGTON APPLICATIONS ·General-purpose power amplifier and low frequency swithing applications PINNING PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL VCBO VCEO VEBO IC PD Tj Tstg PARAMETER Collector-bas.
NS MIN TYP. MAX UNIT SYMBOL VCEO(SUS) VCEsat VBEsat VBE ICEO ICEX IEBO hFE-1 hFE-2 Collector-emitter sustaining voltage IC=0.1 A ;IB=0 IC=10A ;IB=100mA IC=10A ;IB=100mA IC=3A ; VCE=4V VCE=40V; IB=0 VCE=55V; VBE(off)=-1.5V VEB=5V; IC=0 IC=3A ; VCE=4V IC=15A ; VCE=4V 45 V Collector-emitter saturation voltage 3.0 V Base-emitter saturation voltage 4.0 V Base-emitter on voltage 2.8 V Collector cut-off current 1.0 mA Collector cut-off current 0.5 mA Emitter cut-off current 3.0 mA DC current gain 500 DC current gain 100 2 SavantIC Semiconductor www.DataSheet4U.com Produ.
2N6492 - INCHANGE
·High DC current gain : hFE= 500(Min)@ IC= 3A ·With TO-3 package ·Low collector saturation ·100% avalanche tested ·Minim.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2N6490 |
STMicroelectronics |
COMPLEMENTARY SILICON POWER TRANSISTORS |
|
| 2 | 2N6490 |
ON Semiconductor |
COMPLEMENTARY SILICON POWER TRANSISTORS |
|
| 3 | 2N6490 |
Inchange Semiconductor |
Silicon PNP Power Transistors |
|
| 4 | 2N6490 |
CDIL |
PNP PLASTIC POWER TRANSISTORS |
|
| 5 | 2N6490 |
Central Semiconductor |
COMPLEMENTARY SILICON POWER TRANSISTORS |
|
| 6 | 2N6491 |
ON Semiconductor |
COMPLEMENTARY SILICON POWER TRANSISTORS |
|
| 7 | 2N6491 |
Inchange Semiconductor |
Silicon PNP Power Transistors |
|
| 8 | 2N6491 |
CDIL |
PNP PLASTIC POWER TRANSISTORS |
|
| 9 | 2N6491 |
Central Semiconductor |
COMPLEMENTARY SILICON POWER TRANSISTORS |
|
| 10 | 2N6493 |
INCHANGE |
NPN Transistor |
|
| 11 | 2N6493 |
SavantIC |
Silicon Power Transistor |
|
| 12 | 2N6494 |
INCHANGE |
NPN Transistor |
|