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The CENTRAL SEMICONDUCTOR 2N6298 series devices are complementary silicon Darlington power transistors manufactured by the epitaxial base process designed for high gain amplifier and medium speed switching applications. MARKING: FULL PART NUMBER TO-66 CASE MAXIMUM RATINGS: (TC=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Con.
00mA (2N6298, 2N6300) 60 BVCEO IC=100mA (2N6299, 2N6301) 80 VCE(SAT) IC=4.0A, IB=16mA VCE(SAT) IC=8.0A, IB=80mA VBE(SAT) IC=8.0A, IB=80mA VBE(ON) VCE=3.0V, IC=4.0A hFE VCE=3.0V, IC=4.0A 750 hFE VCE=3.0V, IC=8.0A 100 hfe VCE=3.0V, IC=3.0A, f=1.0kHz 300 fT VCE=3.0V, IC=3.0A, f=1.0MHz 4.0 Cob VCB=10V, IE=0, f=100kHz (NPN types) Cob VCB=10V, IE=0, f=100kHz (PNP types) MAX 0.5 5.0 0.5 2.0 2.0 3.0 4.0 2.8 18K 200 300 UNITS V V V A A mA W °C °C/W UNITS mA mA mA mA V V V V V V MHz pF pF R3 (2-September 2014) 2N6298 2N6299 PNP 2N6300 2N6301 NPN COMPLEMENTARY SILICON DARLINGTON PO.
2N6301 - Microsemi
TECHNICAL DATA PNP DARLINGTON POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/539 Devices 2N6300 2N6301 Qualifi.
2N6301 - VPT
2N6300 & 2N6301 NPN Darlington Power Silicon Transistor Features • Available in JAN, JANTX, JANTXV per MIL-PRF-500/539 •.
2N6301 - Savantic
·With TO-66 package ·DARLINGTON ·Low collector saturation voltage ·Complement to type 2N6298/6299 APPLICATIONS ·General .
2N6301 - Seme LAB
2N6300 2N6301 MECHANICAL DATA Dimensions in mm (inches) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. 12 6.3.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2N6300 |
VPT |
NPN Darlington Power Silicon Transistor |
|
| 2 | 2N6300 |
Central Semiconductor |
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS |
|
| 3 | 2N6300 |
Microsemi |
PNP DARLINGTON POWER SILICON TRANSISTOR |
|
| 4 | 2N6300 |
Savantic |
Silicon NPN Power Transistors |
|
| 5 | 2N6300 |
Seme LAB |
DARLINGTON SILICON POWER TRANSISTORS |
|
| 6 | 2N6302 |
Seme LAB |
Bipolar NPN Device |
|
| 7 | 2N6302 |
SavantIC |
Silicon Power Transistors |
|
| 8 | 2N6303 |
Microsemi Corporation |
Silicon PNP Power Transistors |
|
| 9 | 2N6303 |
Crystaloncs |
Power Transistor |
|
| 10 | 2N6303 |
Seme LAB |
Bipolar PNP Device |
|
| 11 | 2N6304 |
Microsemi Corporation |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS |
|
| 12 | 2N6304 |
Motorola |
HIGH FREQUENCY TRANSISTOR |
|