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2N6301 |
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| Part Number | 2N6301 |
| Manufacturer | Seme LAB |
| Description | 2N6300 2N6301 MECHANICAL DATA Dimensions in mm (inches) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. 12 6.35 (0.250) 8.64 (0.340) DARLINGTON SILICON POWER TRANSISTORS Designed for genera... |
| Features |
• High DC Current Gain • Monolithic Construction with Built-in Base –Emitter Shunt Resistors ABSOLUTE MAXIMUM RATINGS(Tc = 25°C unless otherwise stated) 2N6300 2N6301 VCEO Collector – Emitter Voltage 60V 80V VCBO Collector – Base Voltage 60V 80V VEBO Emitter – Base Voltage 5V IC Collector Current Continuous 8A Peak 16A IB Base Current PD Total Dissipation @ TC = 25°C Derate above 25°C 120mA 100W 75W 0.571W/°C 0.428W/°C TSTG , TJ TθJC Operating and Storage Junction Temperature Range Thermal Resistance – Junction - Case –65 to +200°C 1.75°C/W 2.33°C/W Semelab Plc reserv... |
| Document |
 2N6301 Data Sheet
PDF 20.75KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2N6300 |
VPT |
NPN Darlington Power Silicon Transistor |
|
| 2 | 2N6300 |
Central Semiconductor |
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS |
|
| 3 | 2N6300 |
Microsemi |
PNP DARLINGTON POWER SILICON TRANSISTOR |
|
| 4 | 2N6300 |
Savantic |
Silicon NPN Power Transistors |
|
| 5 | 2N6300 |
Seme LAB |
DARLINGTON SILICON POWER TRANSISTORS |
|