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2N6300 & 2N6301 NPN Darlington Power Silicon Transistor Features • Available in JAN, JANTX, JANTXV per MIL-PRF-500/539 • TO-66 (TO-213AA) Package • Designed for High Gain Amplifier and Medium Speed Switching Applications Rev. V4 Electrical Characteristics (TA = +25oC unless otherwise noted) Parameter Test Conditions Symbol Units Min. Max. Collector - .
• Available in JAN, JANTX, JANTXV per MIL-PRF-500/539
• TO-66 (TO-213AA) Package
• Designed for High Gain Amplifier and Medium Speed
Switching Applications
Rev. V4
Electrical Characteristics (TA = +25oC unless otherwise noted)
Parameter
Test Conditions
Symbol Units Min.
Max.
Collector - Emitter Breakdown Voltage
Collector - Emitter Cutoff Current Collector - Emitter Cutoff Current
Emitter - Base Cutoff Current
IC = 100 mA dc; 2N6300 IC = 100 mA dc; 2N6301
VCE = 30 V dc; 2N6300 VCE = 40 V dc; 2N6301 VCE = 60 V dc; VBE = -1.5 V dc; 2N6300 VCE = 80 V dc; VBE = -1.5 V dc; 2N6301
VEB = 5 V .
2N6300 - Microsemi
TECHNICAL DATA PNP DARLINGTON POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/539 Devices 2N6300 2N6301 Qualifi.
2N6300 - Central Semiconductor
The CENTRAL SEMICONDUCTOR 2N6298 series devices are complementary silicon Darlington power transistors manufactured by .
2N6300 - Savantic
·With TO-66 package ·DARLINGTON ·Low collector saturation voltage ·Complement to type 2N6298/6299 APPLICATIONS ·General .
2N6300 - Seme LAB
2N6300 2N6301 MECHANICAL DATA Dimensions in mm (inches) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. 12 6.3.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2N6301 |
VPT |
NPN Darlington Power Silicon Transistor |
|
| 2 | 2N6301 |
Central Semiconductor |
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS |
|
| 3 | 2N6301 |
Microsemi |
PNP DARLINGTON POWER SILICON TRANSISTOR |
|
| 4 | 2N6301 |
Savantic |
Silicon NPN Power Transistors |
|
| 5 | 2N6301 |
Seme LAB |
DARLINGTON SILICON POWER TRANSISTORS |
|
| 6 | 2N6302 |
Seme LAB |
Bipolar NPN Device |
|
| 7 | 2N6302 |
SavantIC |
Silicon Power Transistors |
|
| 8 | 2N6303 |
Microsemi Corporation |
Silicon PNP Power Transistors |
|
| 9 | 2N6303 |
Crystaloncs |
Power Transistor |
|
| 10 | 2N6303 |
Seme LAB |
Bipolar PNP Device |
|
| 11 | 2N6304 |
Microsemi Corporation |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS |
|
| 12 | 2N6304 |
Motorola |
HIGH FREQUENCY TRANSISTOR |
|