2N6302 Silicon Power Transistors Datasheet

2N6302 Silicon Power Transistors

·With TO-3 package ·Low collector saturation voltage ·High DC current gain @IC=8A APPLICATIONS ·Designed for use in high power audio amplifier applications and high voltage switching regulator circuits PINNING (See Fig.2) PIN 1 2 3 Base Emitter Collector DESCRIPTION 2N6302 Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL .

Features

NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter on voltage Collector cut-off current Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=0.1A ; IB=0 IC=10A; IB=1A IC=16A; IB=4A IC=10A; IB=1A IC=8A ; VCE=4V VCE=140V; VBE=-1.5V TC=150 VCB=140V; IE=0 VCE=70V; IB=0 VEB=7V; IC=0 IC=8A ; VCE=4V IC=16A ; VCE=4V IC=1A ; VCE=10.

The same part from a different manufacturer

2N6302 - Seme LAB

www.DataSheet4U.com 2N6302 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06).

Related Product

No.	Partie #	Fabricant	Description
1	2N6300	VPT	NPN Darlington Power Silicon Transistor
2	2N6300	Central Semiconductor	COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
3	2N6300	Microsemi	PNP DARLINGTON POWER SILICON TRANSISTOR
4	2N6300	Savantic	Silicon NPN Power Transistors
5	2N6300	Seme LAB	DARLINGTON SILICON POWER TRANSISTORS
6	2N6301	VPT	NPN Darlington Power Silicon Transistor
7	2N6301	Central Semiconductor	COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
8	2N6301	Microsemi	PNP DARLINGTON POWER SILICON TRANSISTOR
9	2N6301	Savantic	Silicon NPN Power Transistors
10	2N6301	Seme LAB	DARLINGTON SILICON POWER TRANSISTORS
11	2N6303	Microsemi Corporation	Silicon PNP Power Transistors
12	2N6303	Crystaloncs	Power Transistor

2N6302 - SavantIC