·With TO-66 package ·Low collector saturation voltage APPLICATIONS ·For general–purpose switching and power amplifier applications. PINNING PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-66) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL VCBO PARAMETER 2N5739 Collector-base voltage 2N5740 2N5739 VCEO VEBO IC ICM IB PC Tj Tstg Co.
ISTICS Tj=25 unless otherwise specified PARAMETER 2N5739 IC=-0.2A ;IB=0 2N5740 IC=-5A; IB=-0.5A IC=-10A ;IB=-2.5A IC=-10A ;IB=-2.5A IC=-4A ; VCE=-4V VCB=Rated VCBO; IE=0 VCE= Rated VCEO; VBE(off)=1.5V TC=150 VEB=-5V; IC=0 IC=-5A ; VCE=-5V IC=-10A ; VCE=-5V IC=-0.5A ; VCE=-10V CONDITIONS 2N5739 2N5740 SYMBOL MIN -60 TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage V -100 -1.0 -3.0 -2.5 -1.5 -0.1 -0.5 -5.0 -1.0 20 4 10 MHz 80 V V V V mA mA mA VCEsat-1 VCEsat-2 VBEsat VBE ICBO ICEX IEBO hFE-1 hFE-2 fT Collector-emitter saturation voltage Collector-emitter saturation voltage.
2N5739 Dimensions in mm (inches). 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. 12 6.35 (0.250) 8.64 (0.340).
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2N5730 |
SSDI |
NPN Transistor | |
2 | 2N5730 |
Microsemi |
NPN Transistor | |
3 | 2N5731 |
SSDI |
NPN Transistor | |
4 | 2N5732 |
SavantIC |
Silicon NPN Power Transistors | |
5 | 2N5733 |
SSDI |
NPN Transistor | |
6 | 2N5734 |
Seme LAB |
Bipolar NPN Device | |
7 | 2N5734 |
SavantIC |
Silicon NPN Power Transistors | |
8 | 2N5737 |
SavantIC |
(2N5737 / 2N5738) Silicon PNP Power Transistors | |
9 | 2N5738 |
SavantIC |
(2N5737 / 2N5738) Silicon PNP Power Transistors | |
10 | 2N5738 |
Seme LAB |
Bipolar PNP Device | |
11 | 2N5716 |
ETC |
SILICON LOW NOISE N-CHANNEL JUNCTION FET | |
12 | 2N5717 |
ETC |
SILICON LOW NOISE N-CHANNEL JUNCTION FET |