·With TO-3 package ·Low collector saturation voltage APPLICATIONS ·For general–purpose switching and power amplifier applications. PINNING PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL VCBO PARAMETER 2N5737 Collector-base voltage 2N5738 2N5737 VCEO VEBO IC ICM IB PC Tj Tstg Coll.
TICS Tj=25 unless otherwise specified PARAMETER 2N5737 VCEO(SUS) Collector-emitter sustaining voltage 2N5738 VCEsat-1 VCEsat-2 VBEsat VBE ICBO ICEX IEBO hFE-1 hFE-2 fT Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter on voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency IC=-5A; IB=-0.5A IC=-10A ;IB=-2.5A IC=-10A ;IB=-2.5A IC=-4A ; VCE=-4V VCB=Rated VCBO; IE=0 VCE= Rated VCEO; VBE(off)=-1.5V TC=150 VEB=-5V; IC=0 IC=-5A ; VCE=-5V IC=-10A ; VC.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2N5730 |
SSDI |
NPN Transistor | |
2 | 2N5730 |
Microsemi |
NPN Transistor | |
3 | 2N5731 |
SSDI |
NPN Transistor | |
4 | 2N5732 |
SavantIC |
Silicon NPN Power Transistors | |
5 | 2N5733 |
SSDI |
NPN Transistor | |
6 | 2N5734 |
Seme LAB |
Bipolar NPN Device | |
7 | 2N5734 |
SavantIC |
Silicon NPN Power Transistors | |
8 | 2N5738 |
SavantIC |
(2N5737 / 2N5738) Silicon PNP Power Transistors | |
9 | 2N5738 |
Seme LAB |
Bipolar PNP Device | |
10 | 2N5739 |
SavantIC |
(2N5739 / 2N5740) Silicon PNP Power Transistors | |
11 | 2N5739 |
Seme LAB |
Bipolar PNP Device | |
12 | 2N5716 |
ETC |
SILICON LOW NOISE N-CHANNEL JUNCTION FET |