·With TO-3 package ·High current capability APPLICATIONS ·For linear amplifier and inductive switching applications PINNING(see fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emit.
L TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A; IB=0 80 V VCEsat-1 Collector-emitter saturation voltage IC=10 A;IB=1 A 1.4 V VCEsat-2 Collector-emitter saturation voltage IC=20 A;IB=4 A 4.0 V VBE Base-emitter on voltage IC=10 A; VCE=4V 2.2 V ICBO Collector cut-off current VCB=100V; IE=0 0.1 mA IEBO Emitter cut-off current VEB=7V; IC=0 0.1 mA hFE-1 DC current gain IC=5A ; VCE=2V 30 300 hFE-2 DC current gain IC=20A ; VCE=4V 5 fT Transition frequency IC=1A ; VCE=10V 30 MHz 2 SavantIC Semiconductor www.DataSheet4U.com Produc.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2N5730 |
SSDI |
NPN Transistor | |
2 | 2N5730 |
Microsemi |
NPN Transistor | |
3 | 2N5731 |
SSDI |
NPN Transistor | |
4 | 2N5733 |
SSDI |
NPN Transistor | |
5 | 2N5734 |
Seme LAB |
Bipolar NPN Device | |
6 | 2N5734 |
SavantIC |
Silicon NPN Power Transistors | |
7 | 2N5737 |
SavantIC |
(2N5737 / 2N5738) Silicon PNP Power Transistors | |
8 | 2N5738 |
SavantIC |
(2N5737 / 2N5738) Silicon PNP Power Transistors | |
9 | 2N5738 |
Seme LAB |
Bipolar PNP Device | |
10 | 2N5739 |
SavantIC |
(2N5739 / 2N5740) Silicon PNP Power Transistors | |
11 | 2N5739 |
Seme LAB |
Bipolar PNP Device | |
12 | 2N5716 |
ETC |
SILICON LOW NOISE N-CHANNEL JUNCTION FET |