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2N5716 (SILICON) 2N5717 2N5718 SILICON LOW NOISE N·CHANNEL JUNCTION FIELD·EFFECT TRANSISTORS Depletion Mode Junction Field·Effect Transistors designed for audio amplifiers in low·power or battery operated applications. • Low Zero- Gate-Voltage Drain Current @ VDS = 15 Vdc IDSS= 5O/lAdc to 250 /lAde - 2N5716 200 /lAde to 1.0 mAde - 2N5717 800 /lAde to 4.0 mA.
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2N5716 |
ETC |
SILICON LOW NOISE N-CHANNEL JUNCTION FET |
|
| 2 | 2N5718 |
ETC |
SILICON LOW NOISE N-CHANNEL JUNCTION FET |
|
| 3 | 2N5724 |
Microsemi |
SCR |
|
| 4 | 2N5725 |
Microsemi |
SCR |
|
| 5 | 2N5726 |
Microsemi |
SCR |
|
| 6 | 2N5727 |
Microsemi |
SCR |
|
| 7 | 2N5728 |
Microsemi |
SCR |
|
| 8 | 2N5729 |
Seme LAB |
Bipolar NPN Device |
|
| 9 | 2N5730 |
SSDI |
NPN Transistor |
|
| 10 | 2N5730 |
Microsemi |
NPN Transistor |
|
| 11 | 2N5731 |
SSDI |
NPN Transistor |
|
| 12 | 2N5732 |
SavantIC |
Silicon NPN Power Transistors |
|