2N5210 - ON Semiconductor

2N5210 Amplifier Transistors

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N5209/D Amplifier Transistors NPN Silicon COLLECTOR 3 2 BASE 1 EMITTER 2N5209 2N5210 1 2 3 MAXIMUM RATINGS Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dis.

Features

= 0.1 mAdc, IE = 0) Collector Cutoff Current (VCB = 35 Vdc, IE = 0) Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0) V(BR)CEO V(BR)CBO ICBO IEBO 50 50 — — — — 50 50 Vdc Vdc nAdc nAdc Motorola Small
  –Signal Transistors, FETs and Diodes Device Data © Motorola, Inc. 1996 1 2N5209 2N5210 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Max Unit ON CHARACTERISTICS DC Current Gain (IC = 100 µAdc, VCE = 5.0 Vdc) hFE 2N5209 2N5210 2N5209 2N5210 2N5209 2N5210 VCE(sat) VBE(on) 100 200 150 250 150 250 — — 300 600 — — — — 0.7 0.85 Vdc Vdc — (IC = 1.0 mA.