·Collector-emitter sustaining voltage VCEO(SUS)= 90V(Min) ·High saturation voltage ·Wide area of safe operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in high-current, high-speed switching circuits such as:low-distortion power amplifiers,oscillators, switching regulators, series reg.
0 UNIT ℃/W 2N5202 isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 200mA; IB= 0 VCER(SUS) Collector-Emitter Sustaining Voltage IC= 200mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 0.4A VBE(sat) Base-Emitter Saturation Voltage IC= 4A; IB= 0.4A ICEO Collector Cutoff Current VCE= 70V; IB= 0 IEBO Emitter Cutoff Current VEB= 6V; IC= 0 hFE1 DC Current Gain IC= 0.5A; .
File No. 766 _________________________________ OOOBLJD Solid State Division Power Transistors 2N3878 2N5202 2N3879 2N6.
The CENTRAL SEMICONDUCTOR 2N5202 is a silicon NPN power transistor mounted in a hermetically sealed metal case, designe.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2N5204 |
Knox Semiconductor Inc |
25 and 35 Amp RMS SCRs | |
2 | 2N5204 |
International Rectifier |
25 and 35 Amp RMS SCRs | |
3 | 2N5204 |
Digitron Semiconductors |
SILICON CONTROLLED RECTIFIER | |
4 | 2N5204 |
Solid State |
SCR | |
5 | 2N5205 |
Knox Semiconductor Inc |
25 and 35 Amp RMS SCRs | |
6 | 2N5205 |
International Rectifier |
25 and 35 Amp RMS SCRs | |
7 | 2N5205 |
Digitron Semiconductors |
SILICON CONTROLLED RECTIFIER | |
8 | 2N5205 |
Solid State |
SCR | |
9 | 2N5206 |
Knox Semiconductor Inc |
25 and 35 Amp RMS SCRs | |
10 | 2N5206 |
International Rectifier |
25 and 35 Amp RMS SCRs | |
11 | 2N5206 |
Solid State |
SCR | |
12 | 2N5206 |
Digitron Semiconductors |
SILICON CONTROLLED RECTIFIER |