Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
2N5210 |
Click to view a larger image
| Part Number | 2N5210 |
| Manufacturer | Fairchild Semiconductor |
| Description | 2N5210 Discrete POWER & Signal Technologies 2N5210 C BE TO-92 NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose amplifier applications at collector ... |
| Features |
Characteristic
Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient
Max
2N5210 625 5.0 83.3 200
Units
mW mW/ °C °C/W °C/W
© 1997 Fairchild Semiconductor Corporation
2N5210
NPN General Purpose Amplifier
(continued)
Electrical Characteristics
Symbol Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
V(BR)CEO V(BR)CBO ICBO IEBO Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current IC = 1.0 mA, IB = 0 IC = 0.1 mA, I... |
| Document |
 2N5210 Data Sheet
PDF 77.50KB |
| Distributor | Stock | Price | Buy |
|---|
