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2N5219 (SILICON) NPN SILICON ANNULAR TRANSISTOR · .. designed for general-purpose amplifier applications. • Low Collector-Emitter Saturation Voltage VCE(sat): 0.4 Vdc (Max) @ IC: 10 mAde • High Current-Gain-Bandwidth Product fT: 150 MHz (Min) @ IC: 10 mAde • Low Collector-Base Capacitance Ccb: 4.0 pF (Max)@ VCE: 10 Vdc NPN SILICON AMPLIFIER TRANSISTOR *MA.
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2N5210 |
Fairchild Semiconductor |
NPN General Purpose Amplifier |
|
| 2 | 2N5210 |
ON Semiconductor |
Amplifier Transistors |
|
| 3 | 2N5210 |
NTE |
Silicon PNP Transistor |
|
| 4 | 2N5210 |
Motorola |
AMPLIFIER TRANSISTOR |
|
| 5 | 2N5218 |
SSDI |
NPN Transistor |
|
| 6 | 2N5202 |
INCHANGE |
NPN Transistor |
|
| 7 | 2N5202 |
Central Semiconductor |
NPN Transistor |
|
| 8 | 2N5202 |
RCA |
Power Transistors |
|
| 9 | 2N5204 |
Knox Semiconductor Inc |
25 and 35 Amp RMS SCRs |
|
| 10 | 2N5204 |
International Rectifier |
25 and 35 Amp RMS SCRs |
|
| 11 | 2N5204 |
Digitron Semiconductors |
SILICON CONTROLLED RECTIFIER |
|
| 12 | 2N5204 |
Solid State |
SCR |
|