2N3173 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) Bipolar PNP Device in a Hermetically sealed TO3 Metal Package. 38.61 (1.52) 39.12 (1.54) 29.9 (1.177) 30.4 (1.197) 16.64 (0.655) 17.15 (0.675) 0.97 (0.060) 1.10 (0.043) 22.23 (0.875) max. 12 3 (case) 3.84 (0.151) 4.09 (0.
.
·Excellent Safe Operating Area ·Collector-Emitter Saturation Voltage- : VCE(sat)= -0.75V(Max)@ IC = -1A ·100% avalanche .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2N3171 |
Inchange Semiconductor |
Silicon PNP Power Transistor | |
2 | 2N3171 |
Seme LAB |
Bipolar PNP Device | |
3 | 2N3171H |
INCHANGE |
PNP Transistor | |
4 | 2N3172 |
Inchange Semiconductor |
Silicon PNP Power Transistor | |
5 | 2N3174 |
Inchange Semiconductor |
Silicon PNP Power Transistor | |
6 | 2N3174 |
Seme LAB |
Bipolar PNP Device | |
7 | 2N3175 |
SSDI |
PNP Transistor | |
8 | 2N3176 |
SSDI |
PNP Transistor | |
9 | 2N3177 |
SSDI |
PNP Transistor | |
10 | 2N3178 |
SSDI |
PNP Transistor | |
11 | 2N3107 |
Micro Electronics |
NPN SILICON EPITAXIAL TRANSISTOR | |
12 | 2N3107 |
Micro Electronics |
(2N3107 - 2N3110) NPN Silicon AF Medium Amplifiers and Switches |