·Excellent Safe Operating Area ·Collector-Emitter Saturation Voltage- : VCE(sat)= -0.75V(Max)@ IC = -1A ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·All semelab hermetically sealed products,can be processed in accordance with the requirements of BS,CECC,and JAN,JANTX and JANTXV and .
CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= -1A; IB= -0.14A VBE(sat) Base-Emitter Saturation Voltage IC= -1A; IB= -0.14A ICEO Collector Cutoff Current VCE= -60V; IB=0 IEBO Emitter Cutoff Current VEB= -10V; IC=0 hFE DC Current Gain IC= -1A ; VCE= -3V 2N3172 MIN MAX UNIT -0.75 V -1.8 V -0.1 mA -0.1 mA 12 36 Notice: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2N3171 |
Inchange Semiconductor |
Silicon PNP Power Transistor | |
2 | 2N3171 |
Seme LAB |
Bipolar PNP Device | |
3 | 2N3171H |
INCHANGE |
PNP Transistor | |
4 | 2N3173 |
Inchange Semiconductor |
Silicon PNP Power Transistor | |
5 | 2N3173 |
Seme LAB |
Bipolar PNP Device | |
6 | 2N3174 |
Inchange Semiconductor |
Silicon PNP Power Transistor | |
7 | 2N3174 |
Seme LAB |
Bipolar PNP Device | |
8 | 2N3175 |
SSDI |
PNP Transistor | |
9 | 2N3176 |
SSDI |
PNP Transistor | |
10 | 2N3177 |
SSDI |
PNP Transistor | |
11 | 2N3178 |
SSDI |
PNP Transistor | |
12 | 2N3107 |
Micro Electronics |
NPN SILICON EPITAXIAL TRANSISTOR |