2N3173 Inchange Semiconductor Silicon PNP Power Transistor Datasheet, en stock, prix

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2N3173

Inchange Semiconductor
2N3173
2N3173 2N3173
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Part Number 2N3173
Manufacturer Inchange Semiconductor
Description ·Excellent Safe Operating Area ·Collector-Emitter Saturation Voltage- : VCE(sat)= -0.75V(Max)@ IC = -1A ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable...
Features CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= -1A; IB= -0.14A VBE(sat) Base-Emitter Saturation Voltage IC= -1A; IB= -0.14A ICEO Collector Cutoff Current VCE= -80V; IB=0 IEBO Emitter Cutoff Current VEB= -10V; IC=0 hFE DC Current Gain IC= -1A ; VCE= -3V 2N3173 MIN MAX UNIT -0.75 V -1.8 V -0.1 mA -0.1 mA 12 36 Notice: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for ...

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