Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
2N3174 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) Bipolar PNP Device in a Hermetically sealed TO3 Metal Package. 38.61 (1.52) 39.12 (1.54) 29.9 (1.177) 30.4 (1.197) 16.64 (0.655) 17.15 (0.675) 0.97 (0.060) 1.10 (0.043) 22.23 (0.875) max. 12 3 (case) 3.84 (0.151) 4.09 (0.
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2N3174 - Inchange Semiconductor
·Excellent Safe Operating Area ·Collector-Emitter Saturation Voltage- : VCE(sat)= -0.75V(Max)@ IC = -1A ·100% avalanche .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2N3171 |
Inchange Semiconductor |
Silicon PNP Power Transistor |
|
| 2 | 2N3171 |
Seme LAB |
Bipolar PNP Device |
|
| 3 | 2N3171H |
INCHANGE |
PNP Transistor |
|
| 4 | 2N3172 |
Inchange Semiconductor |
Silicon PNP Power Transistor |
|
| 5 | 2N3173 |
Inchange Semiconductor |
Silicon PNP Power Transistor |
|
| 6 | 2N3173 |
Seme LAB |
Bipolar PNP Device |
|
| 7 | 2N3175 |
SSDI |
PNP Transistor |
|
| 8 | 2N3176 |
SSDI |
PNP Transistor |
|
| 9 | 2N3177 |
SSDI |
PNP Transistor |
|
| 10 | 2N3178 |
SSDI |
PNP Transistor |
|
| 11 | 2N3107 |
Micro Electronics |
NPN SILICON EPITAXIAL TRANSISTOR |
|
| 12 | 2N3107 |
Micro Electronics |
(2N3107 - 2N3110) NPN Silicon AF Medium Amplifiers and Switches |
|