Naina Semiconductor Ltd. 25NT Phase Control Thyristors (Stud Type), 25A Features • Improved glass passivation for high reliability • Exceptional stability at high temperatures • High di/dt and dv/dt capabilities • Metric thread type available • Low thermal resistance TO-208AA (TO-48) Voltage Ratings (TJ = 25oC, unless otherwise noted) Type number Voltage.
• Improved glass passivation for high reliability
• Exceptional stability at high temperatures
• High di/dt and dv/dt capabilities
• Metric thread type available
• Low thermal resistance
TO-208AA (TO-48)
Voltage Ratings (TJ = 25oC, unless otherwise noted)
Type number Voltage Code
VDRM/VRRM, Maximum repetitive peak and off-state voltage
(V)
20 200
40 400
60 600
25NT
80
800
100 1000
120 1200
160 1600
VRSM, Maximum nonrepetitive peak voltage
(V) 300 500 700 900 1100 1300 1700
IDRM/IRRM, Maximum at TJ=TJ Maximum (mA)
8.0
Electrical Ratings (TJ = 25oC, unless otherwise noted)
Parame.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 25N01GVSFIG |
Winbond |
3V 1G-BIT SERIAL SLC NAND FLASH MEMORY | |
2 | 25N01GVSFIT |
Winbond |
3V 1G-BIT SERIAL SLC NAND FLASH MEMORY | |
3 | 25N01GVTBIG |
Winbond |
3V 1G-BIT SERIAL SLC NAND FLASH MEMORY | |
4 | 25N01GVTBIT |
Winbond |
3V 1G-BIT SERIAL SLC NAND FLASH MEMORY | |
5 | 25N01GVTCIG |
Winbond |
3V 1G-BIT SERIAL SLC NAND FLASH MEMORY | |
6 | 25N01GVTCIT |
Winbond |
3V 1G-BIT SERIAL SLC NAND FLASH MEMORY | |
7 | 25N01GVZEIG |
Winbond |
3V 1G-BIT SERIAL SLC NAND FLASH MEMORY | |
8 | 25N01GVZEIT |
Winbond |
3V 1G-BIT SERIAL SLC NAND FLASH MEMORY | |
9 | 25N05 |
Inchange Semiconductor |
N-Channel MOSFET | |
10 | 25N06 |
Inchange Semiconductor |
N-Channel MOSFET | |
11 | 25N06 |
Unisonic Technologies |
N-CHANNEL POWER MOSFET | |
12 | 25N10 |
ROUM |
N-Channel MOSFET |