INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 25N05 ·FEATURES ·Drain Current ID= 25A@ TC=25℃ ·Drain Source Voltage- : VDSS= 50V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.065Ω(Max) ·Fast Switching ·APPLICATIONS ·Switching regulators ·Switching converters,motor drivers,relay drivers ·ABSOLUTE MAXIMUM RATINGS(T.
·Drain Current ID= 25A@ TC=25℃
·Drain Source Voltage-
: VDSS= 50V(Min)
·Static Drain-Source On-Resistance
: RDS(on) = 0.065Ω(Max)
·Fast Switching
·APPLICATIONS
·Switching regulators
·Switching converters,motor drivers,relay drivers
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS VGS
Drain-Source Voltage Gate-Source Voltage-Continuous
50 ±30
V V
ID Drain Current-Continuous
25 A
IDM Drain Current-Single Plused
80 A
PD Total Dissipation @TC=25℃
60 W
Tj Max. Operating Junction Temperature 150 ℃
Tstg Storage Temperature
-55~150 ℃
·THERMAL CHARACTERISTICS
SYMB.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 25N01GVSFIG |
Winbond |
3V 1G-BIT SERIAL SLC NAND FLASH MEMORY | |
2 | 25N01GVSFIT |
Winbond |
3V 1G-BIT SERIAL SLC NAND FLASH MEMORY | |
3 | 25N01GVTBIG |
Winbond |
3V 1G-BIT SERIAL SLC NAND FLASH MEMORY | |
4 | 25N01GVTBIT |
Winbond |
3V 1G-BIT SERIAL SLC NAND FLASH MEMORY | |
5 | 25N01GVTCIG |
Winbond |
3V 1G-BIT SERIAL SLC NAND FLASH MEMORY | |
6 | 25N01GVTCIT |
Winbond |
3V 1G-BIT SERIAL SLC NAND FLASH MEMORY | |
7 | 25N01GVZEIG |
Winbond |
3V 1G-BIT SERIAL SLC NAND FLASH MEMORY | |
8 | 25N01GVZEIT |
Winbond |
3V 1G-BIT SERIAL SLC NAND FLASH MEMORY | |
9 | 25N06 |
Inchange Semiconductor |
N-Channel MOSFET | |
10 | 25N06 |
Unisonic Technologies |
N-CHANNEL POWER MOSFET | |
11 | 25N10 |
ROUM |
N-Channel MOSFET | |
12 | 25N10 |
Unisonic Technologies |
N-Channel MOSFET |