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These N-channel Enhanced VDMOSFETs Used advanced trench technology design, provided excellent RDSON and low gate charge. Which accords with the RoHS standard. 2 Features ● Fast Switching ● Low ON Resistance(Rdson≤36mΩ) ● Low Gate Charge(Typical:61nC) ● Low Reverse Transfer Capacitances(Typical:84pF) ● 100% Single Pulse Avalanche Energy Test ● 100% ΔVDS Test .
● Fast Switching
● Low ON Resistance(Rdson≤36mΩ)
● Low Gate Charge(Typical:61nC)
● Low Reverse Transfer Capacitances(Typical:84pF)
● 100% Single Pulse Avalanche Energy Test
● 100% ΔVDS Test
3 Applications
● Power switching applications
● LED Boost
● UPS power supply
● Load switch
VDSS = 100V RDS(on) （TYP)= 30mΩ
ID = 25A
TO-220C TO-220F TO-262
TO-263 TO-252B TO-251B
4 Electrical Characteristics
4.1 Absolute Maximum Rating(Tc=25℃,unless otherwise noted)
Parameter
Symbol
Value
25N10/I25N10/E25N10 /B25N10/D25N10
Maximum Drian-Source DC Voltage
VDS
100
Maximum Gate-Drain Voltage
VGS ±20
.
25N10 - Unisonic Technologies
The UTC 25N10 is an N-channel enhancement mode power MOSFET and it uses UTC’s perfect technology to provide designers wi.
25N10 - INCHANGE
isc N-Channel MOSFET Transistor INCHANGE Semiconductor 25N10 ·FEATURES ·With TO-252(DPAK) packaging ·High speed switch.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 25N102K |
HUAAN |
Metal Oxide Varistor |
|
| 2 | 25N112K |
HUAAN |
Metal Oxide Varistor |
|
| 3 | 25N120 |
IXYS Corporation |
IXGH25N120 |
|
| 4 | 25N122K |
HUAAN |
Metal Oxide Varistor |
|
| 5 | 25N151K |
HUAAN |
Metal Oxide Varistor |
|
| 6 | 25N18 |
Inchange Semiconductor |
N-Channel MOSFET |
|
| 7 | 25N181K |
HUAAN |
Metal Oxide Varistor |
|
| 8 | 25N01GVSFIG |
Winbond |
3V 1G-BIT SERIAL SLC NAND FLASH MEMORY |
|
| 9 | 25N01GVSFIT |
Winbond |
3V 1G-BIT SERIAL SLC NAND FLASH MEMORY |
|
| 10 | 25N01GVTBIG |
Winbond |
3V 1G-BIT SERIAL SLC NAND FLASH MEMORY |
|
| 11 | 25N01GVTBIT |
Winbond |
3V 1G-BIT SERIAL SLC NAND FLASH MEMORY |
|
| 12 | 25N01GVTCIG |
Winbond |
3V 1G-BIT SERIAL SLC NAND FLASH MEMORY |
|