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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 25N40 ·FEATURES ·Drain Current ID= 25A@ TC=25℃ ·Drain Source Voltage : VDSS= 400V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.2Ω(Max) ·Fast Switching ·APPLICATIONS ·Switch mode power supply. ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VG.
·Drain Current ID= 25A@ TC=25℃
·Drain Source Voltage
: VDSS= 400V(Min)
·Static Drain-Source On-Resistance
: RDS(on) = 0.2Ω(Max)
·Fast Switching
·APPLICATIONS
·Switch mode power supply.
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS VGS
Drain-Source Voltage Gate-Source Voltage-Continuous
400 ±30
V V
ID Drain Current-Continuous
25 A
PD Total Dissipation @TC=25℃
278 W
Tj Max. Operating Junction Temperature 150 ℃
Tstg Storage Temperature
-55~150 ℃
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INCHANG.
25N40 - Unisonic Technologies
The UTC 25N40 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 25N40A |
INCHANGE |
N-Channel MOSFET |
|
| 2 | 25N431K |
HUAAN |
Metal Oxide Varistor |
|
| 3 | 25N471K |
HUAAN |
Metal Oxide Varistor |
|
| 4 | 25N01GVSFIG |
Winbond |
3V 1G-BIT SERIAL SLC NAND FLASH MEMORY |
|
| 5 | 25N01GVSFIT |
Winbond |
3V 1G-BIT SERIAL SLC NAND FLASH MEMORY |
|
| 6 | 25N01GVTBIG |
Winbond |
3V 1G-BIT SERIAL SLC NAND FLASH MEMORY |
|
| 7 | 25N01GVTBIT |
Winbond |
3V 1G-BIT SERIAL SLC NAND FLASH MEMORY |
|
| 8 | 25N01GVTCIG |
Winbond |
3V 1G-BIT SERIAL SLC NAND FLASH MEMORY |
|
| 9 | 25N01GVTCIT |
Winbond |
3V 1G-BIT SERIAL SLC NAND FLASH MEMORY |
|
| 10 | 25N01GVZEIG |
Winbond |
3V 1G-BIT SERIAL SLC NAND FLASH MEMORY |
|
| 11 | 25N01GVZEIT |
Winbond |
3V 1G-BIT SERIAL SLC NAND FLASH MEMORY |
|
| 12 | 25N05 |
Inchange Semiconductor |
N-Channel MOSFET |
|