25N40A - INCHANGE

25N40A N-Channel MOSFET

isc N-Channel MOSFET Transistor INCHANGE Semiconductor 25N40A ·FEATURES ·Drain Current ID= 25A@ TC=25℃ ·Drain Source Voltage : VDSS= 400V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.2Ω(Max) ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation. ·APPLICATIONS ·Switch mode power .

Features

·Drain Current ID= 25A@ TC=25℃
·Drain Source Voltage : VDSS= 400V(Min)
·Static Drain-Source On-Resistance : RDS(on) = 0.2Ω(Max)
·Fast Switching
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device performance and reliable operation.
·APPLICATIONS
·Switch mode power supply.
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 400 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 25 A PD Total Dissipation @TC=25℃ 278 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~1.