SKiiP 22 NAB 12 - SKiiP 22 NAB 12 I Absolute Maximum Ratings Symbol Conditions 1) Values 1200 ± 20 23 / 15 46 / 30 24 / 17 48 / 34 1500 25 700 2400 – 40 . . . + 150 – 40 . . . + 125 2500 Units V V A A A A V A A A2s °C °C V Inverter & Chopper VCES VGES IC Theatsink = 25 / 80 °C tp < 1 ms; Theatsink = 25 / 80 °C ICM Theatsink = 25 / 80 °C IF = –IC IFM = –ICM t.
nverter & Chopper VF = VEC IF = 15 A Tj = 25 (125) °C VTO Tj = 125 °C rT Tj = 125 °C IF = 15 A, VR =
– 600 V IRRM diF/dt =
– 400 A/µs Qrr Eoff VGE = 0 V, Tj = 125 °C per diode Rthjh Diode - Rectifier VF IF = 35 A, Tj = 25 °C Rthjh per diode Temperature Sensor T = 25 / 100 °C RTS Shunts (SKiiP 22 NAB 12 I) Rcs(dc) 5 % 4) Rcs(ac) 1% Mechanical Data case to heatsink, SI Units M1 mechanical outline see page Case B 16
– 8 2 min.
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
– typ. max. Units 2,5(3,1) 3,0(3,7) V 55 110 ns 45 90 ns 400 600 ns 70 100 ns 4,0
– mJ 1,0
– nF
– 1,4 K/W V 2,0(1,8) 2,5(2,3) V 1,2 1,0 mΩ 7.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 21NAB06 |
SEMIKRON |
3-phase bridge rectifier braking chopper 3-phase bridge inverter | |
2 | 21N05L |
Siemens |
SPU21N05L | |
3 | 21N05L |
Infineon |
SPD21N05L | |
4 | 21N50C3 |
Infineon |
SPB21N50C3 | |
5 | 21N60 |
Inchange Semiconductor |
N-Channel MOSFET | |
6 | 21N60 |
IXYS Corporation |
IXFH21N60 | |
7 | 21N65M5 |
STMicroelectronics |
N-Channel MOSFET | |
8 | 21NF55 |
ETC |
COLOR TELEVISION SERVICE MANUAL | |
9 | 21NM50 |
UTC |
N-CHANNEL MOSFET | |
10 | 21NM60 |
UTC |
N-CHANNEL MOSFET | |
11 | 21NM65 |
UTC |
N-CHANNEL MOSFET | |
12 | 21-0117G |
DallasSemiconducotr |
PACKAGEOUTLINE/2x2UCSP |