21N05L - Siemens

21N05L SPU21N05L

SPD21N05L SPU21N05L SIPMOS ® Power Transistor • N channel • Enhancement mode • Logic Level • Avalanche-rated • dv/dt rated • 175°C operating temperature Pin 1 G Pin 2 D Pin 3 S Type SPD21N05L SPU21N05L VDS 55 V 55 V ID 20 A 20 A RDS(on) 0.07 Ω 0.07 Ω Maximum Ratings Parameter Continuous drain current TC = 25 °C TC = 100 °C Pulsed drain current TC = .

Features

case Thermal resistance, junction - ambient (PCB mount)
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* Thermal resistance, junction - ambient IEC climatic category, DIN IEC 68-1 Symbol Tj Tstg RthJC RthJA RthJA Values -55 ... + 175 -55 ... + 175 ≤ 2.7 ≤ 50 ≤ 100 55 / 175 / 56 Unit °C K/W
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* when mounted on 1 " square PCB ( FR4 );for recommended footprint Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage VGS = 0 V, ID = 0.25 mA, Tj = 25 °C Gate threshold voltage VGS=VDS, ID = 40 µA Zero gate voltage drain current VDS = 50 V, VGS = 0 V.