These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low onresistance, which is unmatched among siliconbased Power MOSFETs, making it especially suitable for applicat.
Order codes
VDSS @ TJmax
RDS(on) max
ID
PW
STB21N65M5 STF21N65M5
17 A 125 W 17 A(1) 30 W
STI21N65M5 710 V < 0.179 Ω
STP21N65M5
17 A 125 W
STW21N65M5
1. Limited only by maximum temperature allowed
■ Worldwide best RDS(on)
* area
■ Higher VDSS rating
■ High dv/dt capability
■ Excellent switching performance
■ 100% avalanche tested
Application
Switching applications
Description
These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structu.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 21N60 |
Inchange Semiconductor |
N-Channel MOSFET | |
2 | 21N60 |
IXYS Corporation |
IXFH21N60 | |
3 | 21N05L |
Siemens |
SPU21N05L | |
4 | 21N05L |
Infineon |
SPD21N05L | |
5 | 21N50C3 |
Infineon |
SPB21N50C3 | |
6 | 21NAB06 |
SEMIKRON |
3-phase bridge rectifier braking chopper 3-phase bridge inverter | |
7 | 21NAB12 |
SEMIKRON |
3-phase bridge rectifier braking chopper 3-phase bridge inverter | |
8 | 21NF55 |
ETC |
COLOR TELEVISION SERVICE MANUAL | |
9 | 21NM50 |
UTC |
N-CHANNEL MOSFET | |
10 | 21NM60 |
UTC |
N-CHANNEL MOSFET | |
11 | 21NM65 |
UTC |
N-CHANNEL MOSFET | |
12 | 21-0117G |
DallasSemiconducotr |
PACKAGEOUTLINE/2x2UCSP |